A collaboration between researchers from the Indian Institute of Science (IISc), Bangalore, and esteemed institutions like the University of Pennsylvania and MIT has unveiled that indium selenide (InSe), a two-dimensional ferroelectric material, can experience a self-induced transformation into a glassy state when subjected to electric current. The method requires substantially less energy than traditional glass-making processes, specifically using a billion times less electricity than conventional methods that involve heating and rapid cooling (melt-quenching) above 800°C.
The implications of this research extend beyond glass manufacturing; it promises to revolutionize memory storage technologies. The ability to toggle between crystalline and glassy states in a fraction of the energy typically required could lead to faster and more efficient data storage solutions, impacting a wide range of electronic devices
The discovery of self-shocks facilitating the transition from crystalline to glassy states in indium selenide at lower power densities is not just a theoretical innovation but a practical leap that could reshape the landscape of electronic memory devices and data storage technologies. As researchers continue to explore this field, the long-term impacts on energy consumption and device performance could be substantial.
